Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. Low-voltage tunnel transistors for beyond CMOS logic. in Wiley Encyclopedia of Electrical and Electronics Engineering 1–24 (John Wiley & Sons, 2016) Tunnel field-effect transistors: prospects and challenges. 2006 25th International Conference on Microelectronics, MIEL 2006 127–130 (IEEE, 2006).Īvci, U. A novel vertical impact ionisation MOSFET (I-MOS) concept. Impact ionization MOS (I-MOS)-Part II: experimental results. Gopalakrishnan, K., Woo, R., Jungemann, C., Griffin, P. In 2008 IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD 750–757 (IEEE, 2008). Integrated circuit design with NEM relays. Steep-slope hysteresis-free negative capacitance MoS 2 transistors. Demonstration of subthreshold swing smaller than 60mV/decade in Fe-FET with P (VDF-TrFE)/ SiO 2 gate stack. Negative capacitance gives a positive boost. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Tunnel field-effect transistors as energy-efficient electronic switches. Near threshold voltage (NTV) computing: computing in the dark silicon era. The InGaAs/GaAsSb TFETs are co-integrated with the InGaAs MOSFETs on the same silicon substrate by means of a CMOS-compatible replacement-metal-gate fabrication flow, allowing independent optimization of both device types.ĭe, V., Vangal, S. Here, we report a scaled III–V hybrid TFET–MOSFET technology on silicon that achieves a minimum subthreshold slope of 42 mV dec −1 for TFET devices and 62 mV dec −1 for MOSFET devices. Hybrid technologies-combining both TFETs and MOSFETs-could enable low-power and high-performance applications, but require the co-integration of different materials in a scalable complementary metal–oxide–semiconductor (CMOS) platform. III–V heterostructure TFETs are promising for low-power applications, but are outperformed by MOSFETs in terms of speed and energy efficiency when high performance is required at higher drive voltages. Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less than 60 mV of gate voltage swing to induce one order of magnitude variation in the drain current at ambient temperature.

Tunnel field effect transistor